Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFT26N100XHV
BESCHREIBUNG
MOSFET N-CH 1000V 26A TO268HV
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT)
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
IXYS
Series
HiPerFET™, Ultra X
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
113 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
860mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXFT)
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number
IXFT26

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT26N100XHV

Dokumente und Medien

Datasheets
1(IXF(H,T)26N100X(HV) Datasheet)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(1000 V Ultra-Junction X-Class HiPerFET™ Power MOSFETs)
PCN Design/Specification
1(Mult Dev MSL3 Pkg Chg 9/Jun/2020)
PCN Packaging
1(Multiple Devices MSL 09/Jun/2020)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $13.95522
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $15.3989
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $17.805
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $20.21
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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