English
Spain
Rusia
Italy
ChinaFQB3N60CTM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQB3N60CTM
BESCHREIBUNG
MOSFET N-CH 600V 3A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 3A (Tc) 75W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
452
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
565 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQB3N60CTM
2156-FQB3N60CTM-FSTR-ND
FAIFSCFQB3N60CTM
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB3N60CTM
Dokumente und Medien
Datasheets
1(FQB3N60CTM)
Menge Preis
QUANTITÄT: 452
Einzelpreis: $0.66
Verpackung: Bulk
MinMultiplikator: 452
Verpackung: Bulk
MinMultiplikator: 452
Stellvertreter
-