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ChinaTPH3206LDB
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TPH3206LDB
BESCHREIBUNG
GANFET N-CH 650V 16A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount 4-PQFN (8x8)
HERSTELLER
Transphorm
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
81W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-PQFN (8x8)
Package / Case
4-PowerDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TPH3206LDB
Dokumente und Medien
Datasheets
1(TPH3206L Series)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
1(Mult Devices EOL 02/Apr/2018)
HTML Datasheet
1(TPH3206L Series)
Menge Preis
-
Stellvertreter
-