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ChinaFQB19N20CTM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQB19N20CTM
BESCHREIBUNG
MOSFET N-CH 200V 19A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 19A (Tc) 3.13W (Ta), 139W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB19N20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FQB19N20CTMTR
FQB19N20CTMDKR
FQB19N20CTM-ND
FQB19N20CTMCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB19N20CTM
Dokumente und Medien
Datasheets
1(FQB19N20C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Multiple Parts 23/Jun/2022)
PCN Packaging
()
Menge Preis
-
Stellvertreter
Teil Nr. : FCB125N65S3
Hersteller. : onsemi
Verfügbare Menge. : 800
Einzelpreis. : $4.81000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 800
Einzelpreis. : $4.81000
Ersatztyp. : MFR Recommended
Teil Nr. : RCJ160N20TL
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 1,000
Einzelpreis. : $1.71000
Ersatztyp. : Similar
Verfügbare Menge. : 1,000
Einzelpreis. : $1.71000
Ersatztyp. : Similar