English
Spain
Rusia
Italy
China2N3859A_D75Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N3859A_D75Z
BESCHREIBUNG
TRANS NPN 60V 0.5A TO92-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 500 mA 250MHz 625 mW Through Hole TO-92-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 1V
Power - Max
625 mW
Frequency - Transition
250MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
2N3859
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2N3859A_D75Z
Dokumente und Medien
Datasheets
1(2N3859A)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(2N3859A)
Menge Preis
-
Stellvertreter
-