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ChinaPDTB143ET215
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TEILNUMMER DES HERSTELLERS
PDTB143ET215
BESCHREIBUNG
TRANS PREBIAS
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 140 MHz 320 mW Surface Mount TO-236AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
15,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
140 MHz
Power - Max
320 mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236AB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PDTB143ET215
NEXNXPPDTB143ET215
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTB143ET215
Dokumente und Medien
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HTML Datasheet
1(PDTB1zzzT Series)
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