Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD50R800CEATMA1
BESCHREIBUNG
MOSFET N CH 500V 5A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 5A (Tc) 60W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IPD50R800CEATMA1-ND
SP001117710
IPD50R800CEATMA1TR
IPD50R800CEATMA1CT
IPD50R800CEATMA1DKR
ROCINFIPD50R800CEATMA1
2156-IPD50R800CEATMA1-ITTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50R800CEATMA1

Dokumente und Medien

Datasheets
1(IPD50R800CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)

Menge Preis

-

Stellvertreter

Teil Nr. : IPD50R800CEAUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 5,199
Einzelpreis. : $0.74000
Ersatztyp. : Direct
Teil Nr. : STD8NM50N
Hersteller. : STMicroelectronics
Verfügbare Menge. : 1,231
Einzelpreis. : $2.16000
Ersatztyp. : Similar