Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, No Lead
Supplier Device Package
6-WLCSP (3.5x1.9)
Base Product Number
EFC4C012