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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC2735JTL-E
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSTR NPN
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 20V 50mA 1.2GHz 150mW Surface Mount 3-MPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,704
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
1.2GHz
Noise Figure (dB Typ @ f)
6.5dB @ 200MHz
Gain
21dB
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MPAK
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-2SC2735JTL-E
RENRNS2SC2735JTL-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation 2SC2735JTL-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 2704
Einzelpreis: $0.11
Verpackung: Bulk
MinMultiplikator: 2704
Verpackung: Bulk
MinMultiplikator: 2704
Stellvertreter
-