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TEILNUMMER DES HERSTELLERS
2SB647CTZ-E
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANS PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 80 V 1 A 140MHz 900 mW Through Hole TO-92MOD
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
478
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 5V
Power - Max
900 mW
Frequency - Transition
140MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package
TO-92MOD
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-2SB647CTZ-E
RENRNS2SB647CTZ-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB647CTZ-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 478
Einzelpreis: $0.63
Verpackung: Bulk
MinMultiplikator: 478
Verpackung: Bulk
MinMultiplikator: 478
Stellvertreter
-