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ChinaBFP 640FESD E6327
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TEILNUMMER DES HERSTELLERS
BFP 640FESD E6327
BESCHREIBUNG
RF TRANS NPN 4.7V 46GHZ 4TSFP
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount 4-TSFP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
4.7V
Frequency - Transition
46GHz
Noise Figure (dB Typ @ f)
0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain
8B ~ 30.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 30mA, 3V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
4-SMD, Flat Leads
Supplier Device Package
4-TSFP
Base Product Number
BFP 640
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
BFP640FESDE6327CT
BFP 640FESD E6327TR-ND
SP000607096
BFP640FESDE6327
BFP 640FESD E6327DKR-ND
BFP640FESDE6327DKR
BFP 640FESD E6327CT-ND
BFP 640FESD E6327CT
BFP 640FESD E6327DKR
BFP640FESDE6327TR
BFP 640FESD E6327TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFP 640FESD E6327
Dokumente und Medien
Other Related Documents
1(Part Number Guide)
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