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China1N4007C.B.O.
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
1N4007C.B.O.
BESCHREIBUNG
DIODE GEN PURP 1KV 1A DO41
DETAILIERTE BESCHREIBUNG
Diode 1000 V 1A Through Hole DO-41
HERSTELLER
EIC SEMICONDUCTOR INC.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
EIC SEMICONDUCTOR INC.
Series
-
Package
Bag
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1000 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 1 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2 µs
Current - Reverse Leakage @ Vr
5 µA @ 1000 V
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Supplier Device Package
DO-41
Operating Temperature - Junction
-65°C ~ 175°C
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/EIC SEMICONDUCTOR INC. 1N4007C.B.O.
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 5000
Einzelpreis: $0.13
Verpackung: Bag
MinMultiplikator: 5000
Verpackung: Bag
MinMultiplikator: 5000
Stellvertreter
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