Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.4A, 960mA
Rds On (Max) @ Id, Vgs
300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3850