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ChinaSIJA58DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIJA58DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 40V 60A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
50 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
27.7W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIJA58
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIJA58DP-T1-GE3TR
SIJA58DP-T1-GE3DKR
SIJA58DP-T1-GE3CT
SIJA58DP-T1-GE3-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIJA58DP-T1-GE3
Dokumente und Medien
Datasheets
1(SIJA58DP)
PCN Design/Specification
1(Mult Dev 10/Mar/2023)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SIJA58DP)
Menge Preis
QUANTITÄT: 9000
Einzelpreis: $0.36695
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.38471
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Stellvertreter
-