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ChinaFGL60N100BNTD
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TEILNUMMER DES HERSTELLERS
FGL60N100BNTD
BESCHREIBUNG
IGBT 1000V 60A 180W TO264
DETAILIERTE BESCHREIBUNG
IGBT NPT and Trench 1000 V 60 A 180 W Through Hole TO-264-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT and Trench
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Power - Max
180 W
Switching Energy
-
Input Type
Standard
Gate Charge
275 nC
Td (on/off) @ 25°C
140ns/630ns
Test Condition
600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr)
1.2 µs
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Supplier Device Package
TO-264-3
Base Product Number
FGL60N100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FGL60N100BNTDFS
FGL60N100BNTD-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi FGL60N100BNTD
Dokumente und Medien
Datasheets
1(FGL60N100BNTD)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assem/Material Chg 10/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Menge Preis
-
Stellvertreter
-