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ChinaHUFA76633P3
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TEILNUMMER DES HERSTELLERS
HUFA76633P3
BESCHREIBUNG
MOSFET N-CH 100V 39A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 39A (Tc) 145W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
258
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
145W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HUFA76633P3-FS
FAIFSCHUFA76633P3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUFA76633P3
Dokumente und Medien
Datasheets
1(HUFA76633S3ST)
Menge Preis
QUANTITÄT: 258
Einzelpreis: $1.16
Verpackung: Tube
MinMultiplikator: 258
Verpackung: Tube
MinMultiplikator: 258
Stellvertreter
-