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ChinaIRF3711STRLPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF3711STRLPBF
BESCHREIBUNG
MOSFET N-CH 20V 110A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF3711STRLPBFTR
IRF3711STRLPBF-ND
IRF3711STRLPBFDKR
SP001564410
IRF3711STRLPBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF3711STRLPBF
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