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ChinaNP60N04NUK-S18-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NP60N04NUK-S18-AY
BESCHREIBUNG
MOSFET N-CH 40V 60A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 60A (Tc) 1.8W (Ta), 105W (Tc) Through Hole TO-262-3
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
NP60N04NUK-S18-AY Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 105W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Full Pack, I2PAK
Base Product Number
NP60N04
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP60N04NUK-S18-AY
Dokumente und Medien
Datasheets
1(NP60N04MUK, NP60N04NUKMOS FIELD EFFECT TRANSISTOR)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2021)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(NP60N04NUK-S18-AY Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IPI70N04S406AKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 500
Einzelpreis. : $2.04000
Ersatztyp. : Similar
Verfügbare Menge. : 500
Einzelpreis. : $2.04000
Ersatztyp. : Similar