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ChinaIDT08S60C
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TEILNUMMER DES HERSTELLERS
IDT08S60C
BESCHREIBUNG
DIODE SIL CARB 600V 8A TO220-2
DETAILIERTE BESCHREIBUNG
Diode 600 V 8A Through Hole PG-TO220-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
98
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 600 V
Capacitance @ Vr, F
310pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
PG-TO220-2
Operating Temperature - Junction
-55°C ~ 175°C
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
INFINFIDT08S60C
2156-IDT08S60C
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies IDT08S60C
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 98
Einzelpreis: $3.08
Verpackung: Bulk
MinMultiplikator: 98
Verpackung: Bulk
MinMultiplikator: 98
Stellvertreter
-