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ChinaSTP14NF12FP
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TEILNUMMER DES HERSTELLERS
STP14NF12FP
BESCHREIBUNG
MOSFET N-CH 120V 8.5A TO220FP
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
STripFET™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Base Product Number
STP14N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-12606-5
STP14NF12FP-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP14NF12FP
Dokumente und Medien
Datasheets
1(STP14NF12(FP))
Other Related Documents
1(IRF630 View All Specifications)
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