Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FDM606P
BESCHREIBUNG
MOSFET P-CH 20V 6.8A 8MLP
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 6.8A (Tc) 1.92W (Ta) Surface Mount 8-MLP, MicroFET (3x2)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468

Technische Daten

Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.92W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-MLP, MicroFET (3x2)
Package / Case
8-SMD, Flat Lead Exposed Pad

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-FDM606P-FSTR
FAIFSCFDM606P

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDM606P

Dokumente und Medien

Datasheets
1(FDM606P)

Menge Preis

QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Bulk
MinMultiplikator: 468

Stellvertreter

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