Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IDB18E120ATMA1
BESCHREIBUNG
DIODE GEN PURP 1.2KV 31A TO263-3
DETAILIERTE BESCHREIBUNG
Diode 1200 V 31A Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
31A
Voltage - Forward (Vf) (Max) @ If
2.15 V @ 18 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
195 ns
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
IDB18

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080

Andere Namen

2156-IDB18E120ATMA1
SP000013919
INFINFIDB18E120ATMA1
IDB18E120
IDB18E120-ND
IDB18E120ATMA1TR

Kategorie

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies IDB18E120ATMA1

Dokumente und Medien

Datasheets
1(IDB18E120)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IDB18E120)

Menge Preis

-

Stellvertreter

Teil Nr. : ISL9R18120S3ST
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar