Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BS108ZL1G
BESCHREIBUNG
MOSFET N-CH 200V 250MA TO92-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
BS108ZL1G Models
STANDARDPAKET
2,000

Technische Daten

Mfr
onsemi
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 2.8V
Rds On (Max) @ Id, Vgs
8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92 (TO-226)
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Base Product Number
BS108

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

BS108ZL1GOSTB
BS108ZL1GOS-ND
BS108ZL1GOSCT
BS108ZL1GOS

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi BS108ZL1G

Dokumente und Medien

Datasheets
1(BS108)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(BS108)
EDA Models
1(BS108ZL1G Models)

Menge Preis

-

Stellvertreter

Teil Nr. : TN0620N3-G
Hersteller. : Microchip Technology
Verfügbare Menge. : 885
Einzelpreis. : $1.63000
Ersatztyp. : Direct