Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQPF7N10L
BESCHREIBUNG
MOSFET N-CH 100V 5.5A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 5.5A (Tc) 23W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,025

Technische Daten

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
350mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
23W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-FQPF7N10L-FS
FAIFSCFQPF7N10L

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF7N10L

Dokumente und Medien

Datasheets
1(FQPF7N10L)

Menge Preis

QUANTITÄT: 1025
Einzelpreis: $0.29
Verpackung: Tube
MinMultiplikator: 1025

Stellvertreter

-