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ChinaIXFX55N50F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFX55N50F
BESCHREIBUNG
MOSFET N-CH 500V 55A PLUS247-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 55A (Tc) 560W (Tc) Through Hole PLUS247™-3
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerRF™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
560W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX55
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
IXFX55N50F-NDR
Q1649656
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX55N50F
Dokumente und Medien
Datasheets
1(IXF(K,X)55N50F)
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Jan/2019)
HTML Datasheet
1(IXF(K,X)55N50F)
Menge Preis
-
Stellvertreter
-