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ChinaRJK0601DPN-E0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK0601DPN-E0#T2
BESCHREIBUNG
MOSFET N-CH 60V 110A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 110A (Ta) 200W (Tc) Through Hole TO-220AB
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
RJK0601DPN-E0#T2 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
110A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
141 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK0601DPN-E0#T2
Dokumente und Medien
Datasheets
1(RJK0601DPN-E0)
PCN Obsolescence/ EOL
()
PCN Assembly/Origin
1(Wafer Fabrication Site Change 02/Oct/2013)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJK0601DPN-E0#T2 Models)
Menge Preis
-
Stellvertreter
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Verfügbare Menge. : 1,480
Einzelpreis. : $4.01000
Ersatztyp. : Similar
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Einzelpreis. : $4.01000
Ersatztyp. : Similar