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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC4429M
BESCHREIBUNG
BIP NPN 8A 800V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 800 V 8 A 15MHz 3 W Through Hole TO-3PB
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
162
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
800 V
Vce Saturation (Max) @ Ib, Ic
2V @ 800mA, 4A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 600mA, 5V
Power - Max
3 W
Frequency - Transition
15MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SC4429M
ONSONS2SC4429M
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC4429M
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 162
Einzelpreis: $1.86
Verpackung: Bulk
MinMultiplikator: 162
Verpackung: Bulk
MinMultiplikator: 162
Stellvertreter
-