Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TSM3N80CH C5G
BESCHREIBUNG
MOSFET N-CHANNEL 800V 3A TO251
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 3A (Tc) 94W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,750

Technische Daten

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
696 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
TSM3N80

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

TSM3N80CHC5G
TSM3N80CH C5G-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM3N80CH C5G

Dokumente und Medien

Datasheets
1(TSM3N80)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)

Menge Preis

-

Stellvertreter

Teil Nr. : STD3NK80Z-1
Hersteller. : STMicroelectronics
Verfügbare Menge. : 3,000
Einzelpreis. : $1.89000
Ersatztyp. : Similar