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China2SB1135R
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TEILNUMMER DES HERSTELLERS
2SB1135R
BESCHREIBUNG
PNP SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 7 A 10MHz 2 W Through Hole TO-220ML
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
485
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 400mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
2 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SB1135R
ONSONS2SB1135R
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SB1135R
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 485
Einzelpreis: $0.62
Verpackung: Bulk
MinMultiplikator: 485
Verpackung: Bulk
MinMultiplikator: 485
Stellvertreter
-