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ChinaSI1433DH-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI1433DH-T1-GE3
BESCHREIBUNG
MOSFET P-CH 30V 1.9A SC70-6
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 1.9A (Ta) 950mW (Ta) Surface Mount SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
150mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
950mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363
Base Product Number
SI1433
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1433DH-T1-GE3
Dokumente und Medien
Datasheets
1(SI1433DH)
Environmental Information
()
HTML Datasheet
1(SI1433DH)
Menge Preis
-
Stellvertreter
Teil Nr. : FDG316P
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar