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ChinaIRF3708L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF3708L
BESCHREIBUNG
MOSFET N-CH 30V 62A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 62A (Tc) 87W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2417 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
87W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF3708L
Dokumente und Medien
Datasheets
1(IRF3708(S,L))
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HTML Datasheet
1(IRF3708(S,L))
Menge Preis
-
Stellvertreter
Teil Nr. : STI55NF03L
Hersteller. : STMicroelectronics
Verfügbare Menge. : 751
Einzelpreis. : $1.64000
Ersatztyp. : Similar
Verfügbare Menge. : 751
Einzelpreis. : $1.64000
Ersatztyp. : Similar