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ChinaSIHA180N60E-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHA180N60E-GE3
BESCHREIBUNG
MOSFET N-CH 600V 19A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
10 Weeks
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1085 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHA180
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIHA180N60E-GE3DKR
SIHA180N60E-GE3TR
SIHA180N60E-GE3CT-ND
SIHA180N60E-GE3DKR-ND
SIHA180N60E-GE3TR-ND
SIHA180N60E-GE3DKRINACTIVE
SIHA180N60E-GE3CT
SIHA180N60E-GE3CTINACTIVE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHA180N60E-GE3
Dokumente und Medien
Datasheets
1(SIHA180N60E)
HTML Datasheet
1(SIHA180N60E)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $1.63138
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
-