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TEILNUMMER DES HERSTELLERS
2SB1229S-AA
BESCHREIBUNG
TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 2 A 150MHz 750 mW Through Hole 3-NP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,664
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
150MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
ONSONS2SB1229S-AA
2156-2SB1229S-AA
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1229S-AA
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1664
Einzelpreis: $0.18
Verpackung: Bulk
MinMultiplikator: 1664
Verpackung: Bulk
MinMultiplikator: 1664
Stellvertreter
-