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ChinaNDD60N900U1-35G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NDD60N900U1-35G
BESCHREIBUNG
MOSFET N-CH 600V 5.7A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 5.7A (Tc) 74W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NDD60
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NDD60N900U1-35G-ON
ONSONSNDD60N900U1-35G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD60N900U1-35G
Dokumente und Medien
Datasheets
1(NDD60N900U1)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 22/Dec/2017)
PCN Design/Specification
1(NDD60NYYY 25/Jan/2017)
HTML Datasheet
1(NDD60N900U1)
Menge Preis
-
Stellvertreter
Teil Nr. : FCU900N60Z
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 110,978
Einzelpreis. : $0.79000
Ersatztyp. : Similar
Verfügbare Menge. : 110,978
Einzelpreis. : $0.79000
Ersatztyp. : Similar