English
Spain
Rusia
Italy
ChinaG3R350MT12J
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
G3R350MT12J
BESCHREIBUNG
SIC MOSFET N-CH 11A TO263-7
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
G3R350MT12J Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
G3R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id
2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
334 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
G3R350
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G3R350MT12J
Dokumente und Medien
Datasheets
1(G3R350MT12J)
EDA Models
1(G3R350MT12J Models)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $5.51
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-