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ChinaIRL40B212
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRL40B212
BESCHREIBUNG
MOSFET N-CH 40V 195A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRL40B212
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRL40B212
SP001578760
INFIRFIRL40B212
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL40B212
Dokumente und Medien
Datasheets
1(IRL40B212, IRL40S212)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL40B212, IRL40S212)
Simulation Models
1(IRL40S212 Saber File)
Menge Preis
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