English
Spain
Rusia
Italy
ChinaMIEB100W1200TEH
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MIEB100W1200TEH
BESCHREIBUNG
IGBT MODULE 1200V 183A 630W E3
DETAILIERTE BESCHREIBUNG
IGBT Module Three Phase Inverter 1200 V 183 A 630 W Chassis Mount E3
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Box
Product Status
Active
IGBT Type
-
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
183 A
Power - Max
630 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 100A
Current - Collector Cutoff (Max)
300 µA
Input Capacitance (Cies) @ Vce
7.43 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Chassis Mount
Package / Case
E3
Supplier Device Package
E3
Base Product Number
MIEB100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/IXYS MIEB100W1200TEH
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
Menge Preis
-
Stellvertreter
-