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ChinaHAT2210RWS-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HAT2210RWS-E
BESCHREIBUNG
MOSFET 2N-CH 30V 7.5A/8A 8SOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 7.5A (Ta), 8A (Ta) 1.5W (Ta) Surface Mount 8-SOP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual), Schottky
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs
24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
630pF @ 10V, 1330pF @ 10V
Power - Max
1.5W (Ta)
Operating Temperature
150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Base Product Number
HAT2210
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Renesas Electronics Corporation HAT2210RWS-E
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
-