English
Spain
Rusia
Italy
ChinaRJK6012DPP-A0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK6012DPP-A0#T2
BESCHREIBUNG
MOSFET N-CH 600V 6A TO220FP
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 6A (Ta) 29.5W (Ta) Through Hole TO-220FP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.37Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
765 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
29.5W (Ta)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Base Product Number
RJK6012
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6012DPP-A0#T2
Dokumente und Medien
Datasheets
1(RJK6012DPP-E0#T2)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
-