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ChinaFQPF19N20
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF19N20
BESCHREIBUNG
MOSFET N-CH 200V 11.8A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 11.8A (Tc) 50W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
281
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FQPF19N20
ONSONSFQPF19N20
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF19N20
Dokumente und Medien
Datasheets
1(FQPF19N20 Datasheet)
Menge Preis
QUANTITÄT: 281
Einzelpreis: $1.07
Verpackung: Bulk
MinMultiplikator: 281
Verpackung: Bulk
MinMultiplikator: 281
Stellvertreter
-