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TEILNUMMER DES HERSTELLERS
PBSS8110S,126
BESCHREIBUNG
TRANS NPN 100V 1A TO92-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 1 A 100MHz 830 mW Through Hole TO-92-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 250mA, 10V
Power - Max
830 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PBSS8
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
PBSS8110S AMO-ND
934057671126
PBSS8110S AMO
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PBSS8110S,126
Dokumente und Medien
Datasheets
1(PBSS8110S)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PBSS8110S)
Menge Preis
-
Stellvertreter
Teil Nr. : KSC1845FTA
Hersteller. : onsemi
Verfügbare Menge. : 34,355
Einzelpreis. : $0.34000
Ersatztyp. : Similar
Verfügbare Menge. : 34,355
Einzelpreis. : $0.34000
Ersatztyp. : Similar