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ChinaSI4200DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4200DY-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 25V 8A 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 25V 8A 2.8W Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
415pF @ 13V
Power - Max
2.8W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4200DY-T1-GE3TR
SI4200DY-T1-GE3-ND
SI4200DY-T1-GE3CT
SI4200DY-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4200DY-T1-GE3
Dokumente und Medien
Datasheets
1(SI4200DY-T1-GE3)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SI4200DY-T1-GE3)
Menge Preis
-
Stellvertreter
Teil Nr. : SI4214DDY-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 12,365
Einzelpreis. : $0.66000
Ersatztyp. : Similar
Verfügbare Menge. : 12,365
Einzelpreis. : $0.66000
Ersatztyp. : Similar