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ChinaSMMBTA13LT1
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TEILNUMMER DES HERSTELLERS
SMMBTA13LT1
BESCHREIBUNG
TRANS NPN DARL 30V 0.3A SOT23-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 30 V 300 mA 125MHz 225 mW Surface Mount SOT-23-3 (TO-236)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
11,539
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225 mW
Frequency - Transition
125MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-SMMBTA13LT1
ONSONSSMMBTA13LT1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi SMMBTA13LT1
Dokumente und Medien
Datasheets
1(MMBTA14LT1G Datasheet)
Menge Preis
QUANTITÄT: 11539
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11539
Verpackung: Bulk
MinMultiplikator: 11539
Stellvertreter
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