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ChinaPBSS4160PAN,115
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TEILNUMMER DES HERSTELLERS
PBSS4160PAN,115
BESCHREIBUNG
NOW NEXPERIA PBSS4160PAN - SMALL
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 510mW Surface Mount 6-HUSON (2x2)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,018
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
120mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 2V
Power - Max
510mW
Frequency - Transition
175MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)
Base Product Number
PBSS4160
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-PBSS4160PAN,115
NEXNEXPBSS4160PAN,115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4160PAN,115
Dokumente und Medien
Datasheets
1(PBSS4160PAN,115 Datasheet)
Menge Preis
QUANTITÄT: 2018
Einzelpreis: $0.15
Verpackung: Bulk
MinMultiplikator: 2018
Verpackung: Bulk
MinMultiplikator: 2018
Stellvertreter
-