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ChinaGB10SLT12-247D
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TEILNUMMER DES HERSTELLERS
GB10SLT12-247D
BESCHREIBUNG
DIODE ARR SIC SCHOT 1200V TO247
DETAILIERTE BESCHREIBUNG
Diode Array 1 Pair Common Cathode 1200 V 12A Through Hole TO-247-3
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
12A
Voltage - Forward (Vf) (Max) @ If
1.9 V @ 5 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
50 µA @ 1200 V
Operating Temperature - Junction
-55°C ~ 175°C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
GB10SLT12
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Diode Arrays/GeneSiC Semiconductor GB10SLT12-247D
Dokumente und Medien
Featured Product
1(Silicon Carbide Schottky Diode)
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