English
Spain
Rusia
Italy
ChinaFDP6670AL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP6670AL
BESCHREIBUNG
MOSFET N-CH 30V 80A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 80A (Ta) 68W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
503
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2440 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FDP6670AL-FS
FAIFSCFDP6670AL
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP6670AL
Dokumente und Medien
Datasheets
1(FDB6670AL)
Menge Preis
QUANTITÄT: 503
Einzelpreis: $0.6
Verpackung: Tube
MinMultiplikator: 503
Verpackung: Tube
MinMultiplikator: 503
Stellvertreter
-