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ChinaRFP2N12
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFP2N12
BESCHREIBUNG
N-CHANNEL, MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 2A (Tc) 25W (Tc) Through Hole TO-220-3
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
650
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFP2N12
2156-RFP2N12
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP2N12
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 650
Einzelpreis: $0.46
Verpackung: Bulk
MinMultiplikator: 650
Verpackung: Bulk
MinMultiplikator: 650
Stellvertreter
-