Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFH8316TRPBF-IR
BESCHREIBUNG
IRFH8316 - HEXFET POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 27A (Ta), 50A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
866

Technische Daten

Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3610 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 59W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN

Umweltverträgliche Exportklassifikationen

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000

Andere Namen

2156-IRFH8316TRPBF-IR
IFEIRFIRFH8316TRPBF

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFH8316TRPBF-IR

Dokumente und Medien

Datasheets
1(IRFH8316TRPBF)

Menge Preis

QUANTITÄT: 866
Einzelpreis: $0.35
Verpackung: Bulk
MinMultiplikator: 866

Stellvertreter

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