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ChinaBTS247ZE3062ANTMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BTS247ZE3062ANTMA1
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 33A (Tc) 120W (Tc) Surface Mount PG-TO263-5-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
113
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
TEMPFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-5-2
Package / Case
TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BTS247ZE3062ANTMA1
INFINFBTS247ZE3062ANTMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BTS247ZE3062ANTMA1
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 113
Einzelpreis: $2.67
Verpackung: Bulk
MinMultiplikator: 113
Verpackung: Bulk
MinMultiplikator: 113
Stellvertreter
-