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ChinaPH3855L,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PH3855L,115
BESCHREIBUNG
MOSFET N-CH 55V 24A LFPAK56
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 24A (Tc) 50W (Tc) Surface Mount LFPAK56, Power-SO8
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
36mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
765 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
PH38
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PH3855L T/R-ND
PH3855L T/R
934058855115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH3855L,115
Dokumente und Medien
Datasheets
1(PH3855L)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PH3855L)
Menge Preis
-
Stellvertreter
Teil Nr. : HAT2266H-EL-E
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar